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更多>>HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000
來源：http://www.xckfq.com.cn 作者：康華爾電子 2022年07月28
DIODES百利通亞陶晶振所生產的石英晶振,貼片晶振,石英晶體振蕩器,壓電石英晶體元器件、壓電石英晶體、有源晶體廣泛應用于智能設備,汽車電子,無線通訊,網絡通信,精密儀器,GPS衛星,網絡控制器,全球GPS定位系統等領域.工程、銷售、倉儲和物流辦事處設在臺北,香港、曼徹斯特、上海、深圳、中國、韓國、慕尼黑、德國、以及世界各地的支持辦事處.
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
我們的有源晶體振蕩器 (CXO) 提供高價值、卓越的性能和功能以及卓越的品質和服務。我們為批量生產提供快速周轉樣品、響應式技術支持和快速交貨時間。
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
| FNETHE025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| FNETHE025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| FNETHE025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| FNSURV027 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm |
| FNSURV027 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm |
| FNSURV027 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm |
| FNGEPO002 | 亞陶石英晶振 | SaRonix-eCera™ ASSP XO™ | 2.048MHz | ±50ppm |
| FNGEPO002 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 2.048MHz | ±50ppm |
| FNGEPO002 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 2.048MHz | ±50ppm |
| FKSSD1025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| FKSSD1025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| FKSSD1025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| UJWIFI026 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 26MHz | ±20ppm |
| UJWIFI026 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 26MHz | ±20ppm |
| UJWIFI026 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 26MHz | ±20ppm |
| FNEPON125 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 125MHz | ±50ppm |
| FNEPON125 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 125MHz | ±50ppm |
| FNEPON125 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 125MHz | ±50ppm |
| FK1330001Z | Diodes Incorporated | SaRonix-eCera™ FK | 13.3333MHz | ±25ppm |
| FK1330001Z | Diodes Incorporated | SaRonix-eCera™ FK | 13.3333MHz | ±25ppm |
| FK1330001Z | Diodes Incorporated | SaRonix-eCera™ FK | 13.3333MHz | ±25ppm |
| FJ2400011 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
| FJ2400011 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
| FJ2400011 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
提供多種類型和特性：
1) 尺寸從 7x5mm 到 2.0x1.6mm，
2) 傳統 CXO 的溫度穩定性為 ±5PPM，
3) CMOS/TTL、LVPECL、LVDS、HCSL差分晶振的輸出邏輯格式，和慢性粒細胞白血病。
我們的 CXO 被領先制造商用于各種要求苛刻的應用，從消費類到工業、汽車 (AEC-Q200/AEC-Q104)、網絡、存儲、計算、電信等。
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
HX251 XO 系列是高性能CMOS輸出振蕩器系列，支持高溫且抖動性能極低，小體積晶振尺寸2.5x2.0mm四腳貼片晶振、高溫CMOS晶體振蕩器，它支持各種選項，包括更寬的頻率范圍、1.8V/2.5V/3.3V 電壓以及在寬溫度范圍內的各種穩定性。它旨在滿足通信系統、工業應用和其他高性能設備的時鐘源規范。
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
| FJ2400002 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
| FJ2400002 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
| FJ2400002 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
| FN2500149 | Diodes Incorporated | SaRonix-eCera™ FN | 25MHz | ±50ppm |
| FN2500149 | Diodes Incorporated | SaRonix-eCera™ FN | 25MHz | ±50ppm |
| FN2500149 | Diodes Incorporated | SaRonix-eCera™ FN | 25MHz | ±50ppm |
| SXGPON155 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 155.52MHz | ±50ppm |
| SXGPON155 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 155.52MHz | ±50ppm |
| SXGPON155 | 亞陶晶體振蕩器 | SaRonix-eCera™ ASSP XO™ | 155.52MHz | ±50ppm |
| HX2513F0026.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 26MHz | ±50ppm |
| HX2513F0026.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 26MHz | ±50ppm |
| HX2513F0026.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 26MHz | ±50ppm |
| HX3125006Q | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±30ppm |
| HX3125006Q | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±30ppm |
| HX3125006Q | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±30ppm |
| NX3211C0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±50ppm |
| NX3211C0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±50ppm |
| NX3211C0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±50ppm |
| FJ1600002 | Diodes Incorporated | SaRonix-eCera™ FJ | 16MHz | ±50ppm |
| FJ1600002 | Diodes Incorporated | SaRonix-eCera™ FJ | 16MHz | ±50ppm |
| FJ1600002 | Diodes Incorporated | SaRonix-eCera™ FJ | 16MHz | ±50ppm |
| JX7011D0070.656000 | Diodes Incorporated | SaRonix-eCera™ JX | 70.656MHz | ±25ppm |
| JX7011D0070.656000 | Diodes Incorporated | SaRonix-eCera™ JX | 70.656MHz | ±25ppm |
| JX7011D0070.656000 | Diodes Incorporated | SaRonix-eCera™ JX | 70.656MHz | ±25ppm |
| UJ2600007Z | Diodes Incorporated | SaRonix-eCera™ UJ | 26MHz | ±20ppm |
特征：
支持高達125ºC的高溫
低相位抖動 - < 1ps RMS 最大值。
寬頻率范圍 - 1.75 ~ 161MHz
更厚的晶體以提高可靠性
低電源電流 - 最大 40mA。
無鉛且符合 RoHS 標準
應用：
網絡系統
工業系統
專業視頻設備
測試和測量
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
| UJ2600007Z | Diodes Incorporated | SaRonix-eCera™ UJ | 26MHz | ±20ppm |
| UJ2600007Z | Diodes Incorporated | SaRonix-eCera™ UJ | 26MHz | ±20ppm |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm |
| HX7011C0025.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±25ppm |
| HX7011C0025.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±25ppm |
| HX7011C0025.000000 | 百利通亞陶有源晶振 | SaRonix-eCera™ HX | 25MHz | ±25ppm |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| FNC500131 | Diodes Incorporated | SaRonix-eCera™ FN | 125MHz | ±50ppm |
| FNC500131 | Diodes Incorporated | SaRonix-eCera™ FN | 125MHz | ±50ppm |
| HX201 | 標準 | 25 ~ 100 | 2.0 x 1.6 x 0.75 | CMOS | 3.32.51.8 | 4 | - | 1.8V/2.5V/3.3V、2.0x1.6mm、高溫CMOS晶體振蕩器 | |
|---|---|---|---|---|---|---|---|---|---|
| HX251 | 標準 | 25 ~ 100 | 2.5 x 2.0 x 0.9 | CMOS | 3.32.51.8 | 4 | - | 1.8V/2.5V/3.3V、2.5x2.0mm、耐高溫晶振CMOS晶體振蕩器 | |
| HX321 | 標準 | 25 ~ 100 | 3.2 x 2.5 x 1.0 | CMOS | 3.32.51.8 | 4 | - | 1.8V/2.5V/3.3V、3.2x2.5mm、高溫CMOS晶體振蕩器 | |
| HX322 | 標準 | 25 ~ 100 | 3.2 x 2.5 x 1.0 | LVPECL | 3.32.5 | 6 | - | 2.5V/3.3V、3.2x2.5mm、高溫LVPECL晶體振蕩器 | |
| HX323 | 標準 | 25 ~ 100 | 3.2 x 2.5 x 1.0 | LVDS | 3.32.5 | 6 | - | 2.5V/3.3V、3.2x2.5mm、高溫 LVDS 晶體振蕩器 | |
| HX501 | 標準 | 25 ~ 100 | 5.0 x 3.2 x 1.2 | CMOS | 3.32.51.8 | 4 | - | 1.8V/2.5V/3.3V、5.0x3.2mm、高溫CMOS晶體振蕩器 | |
| HX502 | 標準 | 25 ~ 100 | 5.0 x 3.2 x 1.2 | LVPECL | 3.32.5 | 6 | - | 2.5V/3.3V、5.0x3.2mm、高溫LVPECL晶體振蕩器 | |
| HX503 | 標準 | 25 ~ 100 | 5.0 x 3.2 x 1.2 | LVDS | 3.32.5 | 6 | - | 2.5V/3.3V、5.0x3.2mm、高溫 LVDS 晶體振蕩器 | |
| HX701 | 標準 | 25 ~ 100 | 7.0 x 5.0 x 1.4 | CMOS | 3.32.51.8 | 4 | - | 1.8V/2.5V/3.3V、7.0x5.0mm、高溫CMOS晶體振蕩器 | |
| HX702 | 標準 | 25 ~ 100 | 7.0 x 5.0 x 1.4 | LVPECL | 3.32.5 | 6 | - | 2.5V/3.3V、7.0x5.0mm、高溫 LVPECL 晶體振蕩器 |
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此文關鍵字： CMOS輸出振蕩器
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